Liquid crystal display device and electronic device

ABSTRACT

To reduce power consumption and suppress display degradation of a liquid crystal display device. To suppress display degradation due to an external factor such as temperature. A transistor whose channel formation region is formed using an oxide semiconductor layer is used for a transistor provided in each pixel. Note that with the use of a high-purity oxide semiconductor layer, off-state current of the transistor at a room temperature can be 10 aA/μm or less and off-state current at 85° C. can be 100 aA/μm or less. Consequently, power consumption of a liquid crystal display device can be reduced and display degradation can be suppressed. Further, as described above, off-state current of the transistor at a temperature as high as 85° C. can be 100 aA/μm or less. Thus, display degradation of a liquid crystal display device due to an external factor such as temperature can be suppressed.

TECHNICAL FIELD

The present invention relates to a liquid crystal display device and anelectronic device including the liquid crystal display device.

BACKGROUND ART

Liquid crystal display devices are widely used for display devicesranging from large-sized display devices such as television sets tosmall-sized display devices such as mobile phones. Therefore, thedevelopment of liquid crystal display devices is intended to achievecost reduction or to provide high-value added liquid crystal displaydevices. In recent years in particular, there has been a growinginterest in global environment and the development of liquid crystaldisplay devices consuming less power has thus attracted attention.

Technique for reducing power consumption in a liquid crystal displaydevice is disclosed in Patent Document 1. Specifically, a liquid crystaldisplay device is disclosed in which all data signal lines areelectrically separated from a data signal driver in an inactive periodwhere all scan lines and data signal lines are in a non-selection state,so that a high impedance state is obtained.

REFERENCE

[Patent Document 1] Japanese Published Patent Application No.2001-312253

DISCLOSURE OF INVENTION

A liquid crystal display device generally includes a pixel portionhaving a plurality of pixels arranged in a matrix form. The pixelincludes a transistor which controls input of an image signal, a liquidcrystal element to which voltage is applied in accordance with an imagesignal input, and an auxiliary capacitor which stores voltage applied tothe liquid crystal element. The liquid crystal element includes a liquidcrystal material which changes its alignment in accordance with voltageapplied. By controlling the alignment of the liquid crystal material,display of each pixel is controlled.

In the liquid crystal display device disclosed in Patent Document 1, animage signal is not input to each pixel included in a pixel portion inthe inactive period. That is, a transistor for controlling input of animage signal is kept turned off for a long period of time while an imagesignal is held in each pixel. Thus, the effect that leakage of an imagesignal through the transistor has on display of each pixel becomesapparent. Specifically, voltage applied to a liquid crystal element isreduced, whereby display degradation (change) of a pixel including theliquid crystal element becomes apparent.

Further, the amount of leakage of an image signal through the transistoris changed in accordance with operation temperature of the transistor.Specifically, the amount of leakage of an image signal through thetransistor is increased along with increase in the operationtemperature. Therefore, it is difficult for the liquid crystal displaydevice disclosed in Patent Document 1 to maintain uniform displayquality when being used in the outdoors where environments vary widely.

Thus, an object of an embodiment of the present invention is to reducepower consumption of a liquid crystal display device and to suppressdisplay degradation (reduction in display quality).

An object of an embodiment of the present invention is to provide aliquid crystal display device in which display degradation (reduction indisplay quality) due to an external factor such as temperature issuppressed.

The aforementioned problems can be solved by using, as a transistor tobe provided in each pixel, a transistor whose channel formation regionis formed using an oxide semiconductor layer. Note that the oxidesemiconductor layer is an oxide semiconductor layer which is highlypurified by thoroughly removing impurities (hydrogen, water, or thelike) to be electron suppliers (donors). In the transistor with achannel length of 10 μm, off-state current per micrometer in channelwidth at a room temperature can be 10 aA (1×10⁻¹⁷ A) or less (the valueis represented by 10 aA/μm).

Further, the oxide semiconductor layer has a band gap of 2.0 eV or more,preferably 2.5 eV or more, still preferably 3.0 eV or more. In addition,increase in the purity of an oxide semiconductor layer allows theconductivity type of the oxide semiconductor layer to be as close tointrinsic as possible. Thus, in the oxide semiconductor layer, thegeneration of carriers due to thermal excitation can be suppressed.Therefore, the amount of increase in off-state current of a transistorwith an increase in the operation temperature can be reduced.Specifically, in a transistor with a channel length of 10 μm, off-statecurrent per micrometer in channel width at 85° C. can be 100 aA (1×10⁻¹⁶A) or less (the value is represented by 100 aA/μm).

Specifically, an embodiment of the present invention is a liquid crystaldisplay device including a plurality of pixels arranged in a matrixform, and each pixel has: a transistor, switching of which is controlledby a scan line driver circuit; a liquid crystal element including oneterminal to which an image signal is input from a signal line drivercircuit through the transistor and the other terminal to which a commonpotential is supplied, so that voltage is applied in accordance with theimage signal; and a capacitor which stores voltage applied to the liquidcrystal element. The liquid crystal display device further includes acontrol circuit which controls operation of the scan line driver circuitand the signal line driver circuit and selects input of the image signalto each pixel. In the liquid crystal display device, the transistorincludes a channel formation region comprising an oxide semiconductorlayer. In the liquid crystal display device, the amount of leakage ofthe image signal through the transistor in an off state is smaller thanthe amount of leakage of the image signal through the liquid crystalelement.

In a liquid crystal display device which is an embodiment of the presentinvention, a transistor whose channel formation region is formed usingan oxide semiconductor layer is used as the transistor provided in eachpixel. Note that with the use of the high-purity oxide semiconductorlayer, off-state current of the transistor at a room temperature can be10 aA/μm or less and off-state current at 85° C. can be 100 aA/μm orless. Therefore, the amount of leakage of an image signal through thetransistor can be reduced. That is, display degradation (change) whichoccurs when writing frequency of an image signal to a pixel included inthe transistor is reduced can be suppressed. Thus, power consumption ofthe liquid crystal display device can be reduced and display degradation(reduction in display quality) can be suppressed.

Further, as described above, off-state current of the transistor at atemperature as high as 85° C. can be 100 aA/μm or less. That is, thetransistor is a transistor in which an increase in off-state currentwhich accompanies an increase in operation temperature is significantlysmall. Therefore, with the use of such a transistor as the transistorprovided in each pixel of a liquid crystal display device, the effectthat an external factor such as temperature has on leakage of an imagesignal in the pixel can be reduced. That is, the liquid crystal displaydevice is a liquid crystal display device in which display degradation(reduction in display quality) can be suppressed even when the liquidcrystal display device is used in the outdoors or the like whereenvironments vary widely.

BRIEF DESCRIPTION OF DRAWINGS

FIGS. 1A and 1B illustrate a liquid crystal display device in accordancewith Embodiment 1.

FIG. 2 illustrates a liquid crystal display device in accordance withEmbodiment 1.

FIGS. 3A to 3C illustrate a liquid crystal display device in accordancewith Embodiment 1.

FIGS. 4A to 4D illustrate a transistor in accordance with Embodiment 2.

FIGS. 5A and 5B each illustrate a liquid crystal display device inaccordance with Embodiment 3.

FIGS. 6A to 6F each illustrate an electronic device in accordance withEmbodiment 4.

FIG. 7 is a graph showing initial characteristics of transistors inaccordance with Example 1.

FIGS. 8A and 8B are top views of a test element for transistors inaccordance with Example 1.

FIGS. 9A and 9B are graphs showing Vg-Id characteristics of a testelement for transistors in accordance with Example 1.

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiments of the present invention will be described below in detailwith reference to drawings. Note that the present invention is notlimited to the description below, and it is easily understood by thoseskilled in the art that a variety of changes and modifications can bemade without departing from the spirit and scope of the presentinvention. Therefore, the present invention should not be limited to thedescriptions of the embodiments below.

Note that a source terminal and a drain terminal of a transistor changedepending on the structure, the operating condition, and the like of thetransistor. Therefore, in this document, one of terminals serving assource and drain of a transistor is referred to as a first terminal andthe other thereof is referred to as a second terminal for distinction.

Note that the size, the thickness of a layer, or a region of eachstructure illustrated in drawings or the like in embodiments isexaggerated for simplicity in some cases. Therefore, embodiments of thepresent invention are not limited to such scales. Further, in thisspecification, ordinal numbers such as “first”, “second”, and “third”are used in order to avoid confusion among components, and the terms donot limit the components numerically.

Embodiment 1

In this embodiment, an example of an active matrix liquid crystaldisplay device is described. Specifically, an active matrix liquidcrystal display device which can select input of an image signal to apixel portion is described with reference to FIGS. 1A and 1B, FIG. 2,and FIGS. 3A to 3C.

A structure example of a liquid crystal display device of thisembodiment is described below with reference to FIGS. 1A and 1B. FIGS.1A and 1B illustrate a structure example of a liquid crystal displaydevice. The liquid crystal display device illustrated in FIG. 1Aincludes a control circuit 10, a scan line driver circuit 11, a signalline driver circuit 12, and a pixel portion 13. The pixel portion 13includes a plurality of pixels 14 arranged in a matrix form. FIG. 1Billustrates a structure example of one of the pixels 14. The pixel 14illustrated in FIG. 1B includes a transistor 15 having a gate terminalelectrically connected to the scan line driver circuit 11, and a firstterminal electrically connected to the signal line driver circuit 12; aliquid crystal element 16 having one terminal electrically connected toa second terminal of the transistor 15, and the other terminalelectrically connected to a wiring which supplies a common potential(V_(com)); and a capacitor 17 having one terminal electrically connectedto the second terminal of the transistor 15 and the one terminal of theliquid crystal element 16, and the other terminal electrically connectedto a wiring which supplies a common potential (V_(com)).

In the liquid crystal display device of this embodiment, switching ofthe transistor 15 is controlled by the scan line driver circuit 11, andan image signal is input from the signal line driver circuit 12 to theliquid crystal element 16 through the transistor 15. Note that theliquid crystal element 16 includes a liquid crystal layer interposedbetween the one terminal and the other terminal. Voltage correspondingto a potential difference between the image signal and the commonpotential (V_(com)) is applied to the liquid crystal layer. With thevoltage, an alignment state of the liquid crystal layer is controlled.In the liquid crystal display device of this embodiment, display of eachpixel 14 is controlled with the use of the alignment. Note that thecapacitor 17 is provided in order to store voltage applied to the liquidcrystal element 16.

Further, in the liquid crystal display device in this embodiment,operation of the scan line driver circuit 11 and the signal line drivercircuit 12 is controlled by the control circuit 10, whereby input of animage signal to the pixel portion 13 can be selected.

Next, a specific example of components of the liquid crystal displaydevice of this embodiment is described.

<Control Circuit 10>

FIG. 2 illustrates a structure example of the control circuit 10. Thecontrol circuit 10 illustrated in FIG. 2 includes a signal generationcircuit 20, a memory circuit 21, a comparison circuit 22, a selectioncircuit 23, and a display control circuit 24.

The signal generation circuit 20 is a circuit which generates a signalfor operating the scan line driver circuit 11 and the signal line drivercircuit 12 and a signal for forming an image in the pixel portion 13.Specifically, the signal generation circuit 20 is a circuit whichgenerates and outputs an image signal (Data) input to the plurality ofpixels arranged in a matrix form in the pixel portion 13, a signal forcontrolling operation of the scan line driver circuit 11 or the signalline driver circuit 12 (e.g., a start pulse signal (SP), a clock signal(CK), or the like), a high power supply potential (V_(dd)) and a lowpower supply potential (V_(ss)) which are power supply potentials, andthe like. In the control circuit 10 illustrated in FIG. 2, the signalgeneration circuit 20 outputs the image signal (Data) to the memorycircuit 21, and outputs the signal for controlling operation of the scanline driver circuit 11 or the signal line driver circuit 12 to thedisplay control circuit 24. In the case where the image signal (Data)output from the signal generation circuit 20 to the memory circuit 21 isan analog signal, the image signal (Data) can be converted into adigital signal through an A/D converter or the like.

The memory circuit 21 includes a plurality of memories 25 which storeimage signals from an image signal for forming a first image to an imagesignal for forming an n-th image (n is a natural number greater than orequal to 2) in the pixel portion 13. Note that each memory 25 may beformed using a memory element such as a dynamic random access memory(DRAM) or a static random access memory (SRAM), for example. The numberof memories 25 is not particularly limited as long as the memory 25stores an image signal for each image formed in the pixel portion 13.Further, an image signal stored in the plurality of memories 25 areselectively read by the comparison circuit 22 and the selection circuit23.

The comparison circuit 22 is a circuit which selectively reads an imagesignal for forming a k-th image (k is a natural number greater than orequal to 1 and less than n) and an image signal for forming a (k+1)-thimage which are stored in the memory circuit 21, compares the imagesignals, and detects a difference between the image signals. Note thatthe k-th image and the (k+1)-th image are images which are successivelydisplayed in the pixel portion 13. In the case where a difference isdetected by the comparison of the image signals by the comparisoncircuit 22, two images to be formed using the image signals are assumedto be a moving image. On the other hand, in the case where a differenceis not detected by the comparison of the image signals by the comparisoncircuit 22, two images to be formed using the image signals are assumedto be as a still image. That is, the comparison circuit 22 is a circuitwhich determines whether the image signals for forming successivelydisplayed images are either image signals for displaying a moving imageor image signals for displaying a still image, by the detection of adifference by the comparison circuit 22. Note that the comparisoncircuit 22 may be set to detect a difference when the difference exceedsa certain level.

The selection circuit 23 is a circuit which selects output of an imagesignal to the pixel portion based on the difference detected by thecomparison circuit 22. Specifically, the selection circuit 23 is acircuit which outputs an image signal for forming an image from which adifference is detected in the comparison circuit 22 but does not outputan image signal for forming an image from which a difference is notdetected in the comparison circuit 22.

The display control circuit 24 is a circuit which controls supply ofcontrol signals such as a start pulse signal (SP), a clock signal (CK),a high power supply potential (V_(dd)), and a low power supply potential(V_(ss)), to the scan line driver circuit 11 and the signal line drivercircuit 12. Specifically, in the case where images are assumed to be amoving image by the comparison circuit 22 (in the case where adifference between successively displayed images is detected), an imagesignal (Data) supplied from the selection circuit 23 is output to thesignal line driver circuit 12, and control signals (a start pulse signal(SP), a clock signal (CK), a high power supply potential (V_(dd)), a lowpower supply potential (V_(ss)), and the like) are supplied to the scanline driver circuit 11 and the signal line driver circuit 12. On theother hand, in the case where images are assumed to be a still image bythe comparison circuit 22 (in the case where a difference betweensuccessively displayed images is not detected), an image signal (Data)is not supplied from the selection circuit 23, and control signals (astart pulse signal (SP), a clock signal (CK), a high power supplypotential (V_(dd)), a low power supply potential (V_(ss)), and the like)are not supplied to the scan line driver circuit 11 and the signal linedriver circuit 12. That is, in the case where images are assumed to be astill image by the comparison circuit 22 (in the case where a differencebetween successively displayed images is not detected), the operation ofthe scan line driver circuit 11 and the signal line driver circuit 12 iscompletely stopped. Note that in the case where a period during whichimages are assumed to be a still image by the comparison circuit isshort, supply of the high power supply potential (V_(dd)) and the lowpower supply potential (V_(ss)) can be continued. Note that “supply ofthe high power supply potential (V_(dd)) and the low power supplypotential (V_(ss))” means that a potential of a given wiring is fixed toa high power supply potential (V_(dd)) or a low power supply potential(V_(ss)). That is, a given potential of the wiring is changed to a highpower supply potential (V_(dd)) or a low power supply potential(V_(ss)). Since the change in potential is accompanied by powerconsumption, frequent stopping and restarting of supply of a high powersupply potential (V_(dd)) or a low power supply potential (V_(ss)) mightresult in increase of power consumption. In such a case, it ispreferable that a high power supply potential (V_(dd)) and a low powersupply potential (V_(ss)) be continuously supplied. Note that in theforegoing description, “a signal is not supplied” means that a potentialwhich is different from a predetermined potential is supplied to awiring which supplies the signal, or that the wiring is in a floatingstate.

In the control circuit 10, the operation of the scan line driver circuit11 and the signal line driver circuit 12 is controlled as describedabove. Thus, power consumption of the liquid crystal display device canbe reduced.

<Transistor 15>

The transistor 15 is a transistor whose channel formation region isformed using an oxide semiconductor layer. The oxide semiconductor layeris an oxide semiconductor layer which is highly purified and is made tobe electrically i-type (intrinsic) by intentionally removing impuritiessuch as hydrogen, moisture, hydroxyl, or hydride (also referred to as ahydrogen compound) which cause the variation from the oxidesemiconductor layer in order to suppress variation in electriccharacteristics, and by supplying oxygen which is a major component ofan oxide semiconductor and is reduced in the step of removing theimpurities. Note that the band gap of the oxide semiconductor is 2 eV ormore, preferably 2.5 eV or more, still preferably 3.0 eV or more.

Further, the number of carriers in the high-purity oxide semiconductoris very small (close to zero), and the carrier density is less than1×10¹⁴/cm³, preferably less than or equal to 1×10¹²/cm³. That is, thecarrier density of the oxide semiconductor layer is reduced as much aspossible to be extremely close to zero. Since there are extremely fewcarriers in the oxide semiconductor layer, off-state current can be low.The smaller the amount of off-state current is, the better. Therefore,in the aforementioned transistor, off-state current per micrometer ofthe channel width (W) at a room temperature can be 10 aA/μm (1×10⁻¹⁷A/μm) or less, and off-state current per micrometer of the channel width(W) at 85° C. can be 100 aA/μm (1×10⁻¹⁶ A/μm) or less. In general, in atransistor including amorphous silicon, the off-state current at a roomtemperature is 1×10⁻¹³ A/μm or more. Further, since there is no pnjunction and no hot carrier degradation, electric characteristics of thetransistor is not adversely affected. Thus, an image signal holdingperiod of each pixel 14 can be extended. That is, rewriting interval ofan image signal in still image display can be increased. For example, awriting interval of an image signal can be 10 seconds or longer,preferably 30 seconds or longer, still preferably one minute or longerand shorter than 10 minutes. Increase in the writing interval makes itpossible to enhance the effect of suppressing power consumption.

Note that the difficulty in flowing off-state current in the transistorcan be referred as off-state resistivity. The off-state resistivityrefers to resistivity of a channel formation region at the time when thetransistor is off, and the off-state resistivity can be calculated fromoff-state current.

Specifically, the resistance when the transistor is off (off-stateresistance R) can be calculated using Ohm's law from the off-statecurrent and the drain voltage, which leads to the off-state resistivityp which can be calculated using Formula, ρ=RA/L (R is the off-stateresistance), from the cross-sectional area A of the channel formationregion and the length L of the channel formation region (whichcorresponds to the distance between a source electrode and a drainelectrode).

Here, the cross-section area A can be obtained in accordance with theformula A=dW (d: the thickness of the channel formation region, W: thechannel width). In addition, the length L of the channel formationregion is a channel length L. In such a manner, off-state resistivitycan be calculated from off-state current.

The off-state resistivity of the transistor including the oxidesemiconductor layer in this embodiment is preferably 1×10¹¹ Ω·cm ormore, far preferably 1×10¹² Ω·cm or more.

An oxide semiconductor layer which is highly purified by drasticallyremoving hydrogen contained in the oxide semiconductor layer asdescribed above is used in a channel formation region of a transistor,whereby a transistor with an extremely small amount of off-state currentcan be obtained. In addition, in circuit design, the oxide semiconductorlayer can be regarded as an insulator when the transistor is in an offstate. Further, a transistor including an oxide semiconductor layer canbe expected to have a higher current supply capability in an on statethan in a transistor including an amorphous silicon layer.

When design or the like is performed, it is assumed that the off-statecurrent of a transistor including a low-temperature polysilicon layer ata room temperature is approximately 10000 times as large as theoff-state current of a transistor including an oxide semiconductorlayer. Therefore, in the case where the transistor including an oxidesemiconductor layer is compared with the transistor including alow-temperature polysilicon layer, the voltage holding period of thetransistor including an oxide semiconductor layer can be about 10000times as long as that of the transistor including a low-temperaturepolysilicon layer when their storage capacitances are equal orsubstantially equal to each other (about 0.1 pF). As an example, when amoving image is displayed at 60 frames per second, a holding period of atransistor including an oxide semiconductor for one signal writing canbe approximately 160 seconds, which is 10000 times as long as theholding period of the transistor including a low-temperature polysiliconlayer. In this manner, still image display can be performed on a displayportion even by less frequent writing of the image signal.

A long holding period allows frequency of supplying an image signal to apixel to be reduced. In particular, using the aforementioned transistoris very effective for the liquid crystal display device as describedabove in which the image signal can be input to a pixel portionselectively. That is, although there is a possibility that an imagesignal is not input to the pixel in the liquid crystal display devicefor a long period of time, display deterioration (change) in the pixelcan be suppressed by using the aforementioned transistor as a transistorfor controlling input of an image signal to the pixel.

Further, when the transistor is used as a switch for controlling inputof an image signal to a pixel, the size of a capacitor provided in apixel can be reduced. Thus, the aperture ratio of the pixel can be high,and an image signal can be input to the pixel at high speed, forexample.

<Liquid Crystal Element 16 and Capacitor 17>

When the aforementioned transistor is used for the transistor 15 forcontrolling input of an image signal, it is preferable that a substancehaving a high specific resistivity be used as a liquid crystal materialincluded in the liquid crystal element 16. Here, the reason for using asubstance having a high specific resistivity is described with referenceto FIGS. 3A to 3C. FIGS. 3A to 3C are schematic views for illustrating apath of a leaking image signal in a pixel provided with a transistorincluding an amorphous silicon layer and a path of a leaking imagesignal in a pixel provided with a transistor including theaforementioned oxide semiconductor layer.

As illustrated in FIG. 1B, the pixel includes the transistor 15, theliquid crystal element 16, and the capacitor 17. The pixel is equivalentto a circuit illustrated in FIG. 3A when the transistor 15 is in an offstate. That is, the pixel is equivalent to a circuit in which thetransistor 15 is assumed to be a resistor (R_(Tr-Off)), and the liquidcrystal element 16 is assumed to include a resistor (R_(LC)) and acapacitor (C_(LC)). When an image signal is input to the pixel, theimage signal is stored in the capacitor 17 (C_(S)) and the capacitor ofthe liquid crystal element 16 (C_(LC)). When the transistor 15 isbrought into an off state after that, the image signal is leaked throughthe transistor 15 and the liquid crystal element 16 as illustrated inFIGS. 3B and 3C. FIG. 3B is a schematic view illustrating a leakingimage signal in the case where the transistor 15 is a transistorincluding an amorphous silicon layer, and FIG. 3C is a schematic viewillustrating a leaking image signal in the case where the transistor 15is a transistor including an oxide semiconductor layer. The off-stateresistance of the transistor including an amorphous silicon layer islower than the resistance of the liquid crystal element. Therefore, theimage signal is leaked mainly through the transistor including anamorphous silicon layer as illustrated in FIG. 3B (i.e., the imagesignal is leaked mainly through a path A and a path B in FIG. 3B). Onthe other hand, the off-state resistance of the transistor including ahigh-purity oxide semiconductor layer is higher than the resistance ofthe liquid crystal element. Therefore, the image signal is leaked mainlythrough the liquid crystal element as illustrated in FIG. 3C (i.e., theimage signal is leaked mainly through a path C and a path D in FIG. 3C).

That is, though characteristics of a transistor in each pixel of aliquid crystal display device has been conventionally a rate-controllingpoint in image signal holding characteristics in each pixel, in the casewhere a transistor including a high-purity oxide semiconductor layer isused as a transistor in each pixel, a rate-controlling point therein isshifted to the resistance of a liquid crystal element. Therefore, it ispreferable that a substance having a high specific resistivity be usedas the liquid crystal material included in the liquid crystal element16.

Specifically, in a liquid crystal display device whose pixel is providedwith a transistor including a high-purity oxide semiconductor layer, thespecific resistivity of a liquid crystal material is preferably 1×10¹²Ω·cm or more, still preferably over 1×10¹³ Ω·cm, still furtherpreferably over 1×10¹⁴ Ω·cm. In the case where a liquid crystal elementis formed using the liquid crystal material, the resistivity ispreferably 1×10¹¹ Ω·cm or more, still preferably over 1×10¹² Ω·cm, dueto the possibility of enter of an impurity from an alignment film or asealant. The value of the specific resistivity in this specification ismeasured at 20° C.

In the holding period in still image display, the other terminal of theliquid crystal element 16 can be in a floating state without supply of acommon potential (V_(com)) to the terminal. Specifically, a switch maybe provided between the terminal and a power source for supplying acommon potential (V_(com)). The switch may be turned on in a writingperiod, whereby a common potential (V_(com)) may be supplied from thepower source. Then, the switch may be turned off in a remaining holdingperiod, whereby the terminal may be brought into a floating state. It ispreferable that the aforementioned transistor including a high-purityoxide semiconductor layer be also used for the switch. By making theother terminal of the liquid crystal element 16 into a floating state,display degradation (change) in the pixel 14 due to an irregular pulseor the like can be reduced. The reason is described as follows. When apotential of the first terminal of the transistor 15 in an off state ischanged by an irregular pulse, a potential of the one terminal of theliquid crystal element 16 is also changed by capacitive coupling. Atthat time, in the case where a common potential (V_(com)) is supplied tothe other terminal of the liquid crystal element 16, the change ofpotential is directly linked to a change of voltage applied to theliquid crystal element 16. On the other hand, in the case where theother terminal of the liquid crystal element is in a floating state, apotential of the other terminal of the liquid crystal element is alsochanged by capacitive coupling. Consequently, even when the potential ofthe first terminal of the transistor 15 is changed by an irregularpulse, the change of voltage applied to the liquid crystal element 16can be reduced. Therefore, display degradation (change) in the pixel 14can be reduced.

The capacitance of the capacitor 17 (C_(S)) is determined inconsideration of off-state current or the like of a transistor in eachpixel. However, in the case where a transistor including a high-purityoxide semiconductor layer is used for the transistor in a pixel asdescribed above, conditions required for designing the capacitor 17 aregreatly changed. The content is described below using specific numericvalues.

In general, in the case where a transistor including an amorphoussilicon layer is used for a transistor in a pixel, the off-stateresistance is approximately 1×10¹²Ω, and the resistance of a liquidcrystal element is approximately 1×10¹⁵Ω. Therefore, in the case where atransistor including a high-purity oxide semiconductor layer is used asa transistor in a pixel, the amount of leakage of an image signal in thepixel can be reduced to approximately 1/1000. That is, the capacitanceof the capacitor 17 (C_(S)) can be reduced to approximately 1/1000, or arewriting frequency of an image signal in still image display in thepixel can be reduced to approximately 1/1000. For example, in the casewhere writing of an image signal is performed 60 times per second, thewriting frequency can be reduced to approximately once every 15 seconds.Further, with the use of an element with a capacitance of about 50 fF asthe capacitor 17, an image signal can be held in a pixel for about 30seconds. As an example, in order to hold an image signal in each pixelfor 5 seconds to 5 minutes inclusive, the capacitance of the capacitor17 (C_(S)) is preferably 0.5 pF or more, still preferably 1 pF or more.Note that numeric values of various kinds in the foregoing descriptionare estimates.

Note that the contents of Embodiment 1 or part thereof can be combinedfreely with the contents of Embodiments 2, 3, and 4 or part thereof orthe content of Example 1 or part thereof.

Embodiment 2

In this embodiment, an example of the transistor in Embodiment 1 isdescribed with reference to FIGS. 4A to 4D.

FIGS. 4A to 4D illustrate examples of a specific structure and a processfor manufacturing the transistor in Embodiment 1. Note that a thin filmtransistor 410 illustrated in FIGS. 4A to 4D has a bottom-gate structurecalled a channel-etched type and is also referred to as aninverted-staggered thin film transistor. Although a single-gate thinfilm transistor is illustrated in FIGS. 4A to 4D, a multi-gate thin filmtransistor including a plurality of channel formation regions can beformed as needed.

A process for manufacturing the thin film transistor 410 over asubstrate 400 is described below with reference to FIGS. 4A to 4D.

First, a conductive film is formed over the substrate 400 having aninsulating surface, and then, a gate electrode layer 411 is formedthrough a first photolithography step. Note that a resist mask used inthe step may be formed by an inkjet method. Formation of the resist maskby an inkjet method needs no photomask; thus, manufacturing cost can bereduced.

Although there is no particular limitation on a substrate which can beused as the substrate 400 having an insulating surface, it is necessarythat the substrate have at least enough heat resistance to a heattreatment to be performed later. For example, a glass substrate formedusing barium borosilicate glass, aluminoborosilicate glass, or the likecan be used. In the case where a glass substrate is used and thetemperature at which the heat treatment is to be performed later ishigh, a glass substrate whose strain point is greater than or equal to730° C. is preferably used.

Further, an insulating film serving as a base film may be providedbetween the substrate 400 and the gate electrode layer 411. The basefilm has a function of preventing diffusion of an impurity element fromthe substrate 400, and can be formed having a single-layer structure ora layered structure using one or more of a silicon nitride film, asilicon oxide film, a silicon nitride oxide film, and a siliconoxynitride film.

The gate electrode layer 411 can be formed with a single-layer structureor a layered structure using a metal material such as molybdenum,titanium, chromium, tantalum, tungsten, aluminum, copper, neodymium, orscandium, or an alloy material which contains any of these materials asits main component.

For example, as a two-layer structure of the gate electrode layer 411,the following structure is preferable: a structure in which a molybdenumlayer is stacked over an aluminum layer, a structure in which amolybdenum layer is stacked over a copper layer, a structure in which atitanium nitride layer or a tantalum nitride layer is stacked over acopper layer, or a structure in which a titanium nitride layer and amolybdenum layer are stacked. As a three-layer structure, a three-layerstructure of a tungsten layer or a tungsten nitride layer, a layer of analloy of aluminum and silicon or an alloy of aluminum and titanium, anda titanium nitride layer or a titanium layer is preferable.

Then, a gate insulating layer 402 is formed over the gate electrodelayer 411.

The gate insulating layer 402 can be formed with a single-layerstructure or a layered structure using one or more of a silicon oxidelayer, a silicon nitride layer, a silicon oxynitride layer, a siliconnitride oxide layer, and an aluminum oxide layer by a plasma CVD method,a sputtering method, or the like. For example, a silicon oxynitridelayer may be formed using a deposition gas containing silane (SiH₄),oxygen, and nitrogen by a plasma CVD method. Furthermore, a high-kmaterial such as hafnium oxide (HfO_(x)) or tantalum oxide (TaO_(x)) canbe used as the gate insulating layer. The gate insulating layer 402 isformed to a thickness of 100 nm to 500 nm inclusive; in the case wherethe gate insulating layer 402 is formed with a layered structure, forexample, a first gate insulating layer with a thickness of 50 nm to 200nm inclusive and a second gate insulating layer with a thickness of 5 nmto 300 nm inclusive are stacked.

Here, a silicon oxynitride layer is formed as the gate insulating layer402 to a thickness of 100 nm or less by a plasma CVD method.

Moreover, as the gate insulating layer 402, a silicon oxynitride filmmay be formed with a high density plasma apparatus. Here, a high-densityplasma apparatus refers to an apparatus which can realize a plasmadensity higher than or equal to 1×10¹¹/cm³. For example, plasma isgenerated by applying a microwave power of 3 kW to 6 kW so that theinsulating film is formed.

A silane gas (SiH₄), nitrous oxide (N₂O), and a rare gas are introducedinto a chamber as a source gas to generate high-density plasma at apressure of 10 Pa to 30 Pa, and the insulating film is formed over thesubstrate having an insulating surface, such as a glass substrate. Afterthat, the supply of silane (SiH₄) is stopped, and a plasma treatment maybe performed on a surface of the insulating film by introducing nitrousoxide (N₂O) and a rare gas without exposure to the air. The plasmatreatment performed on the surface of the insulating film by introducingnitrous oxide (N₂O) and a rare gas is performed at least after theinsulating film is formed. The insulating film formed through the aboveprocess procedure has small thickness and corresponds to an insulatingfilm whose reliability can be ensured even though it has a thicknessless than 100 nm, for example.

In forming the gate insulating layer 402, the flow ratio of silane(SiH₄) to nitrous oxide (N₂O) which are introduced into the chamber isin the range of 1:10 to 1:200. In addition, as a rare gas which isintroduced into the chamber, helium, argon, krypton, xenon, or the likecan be used. In particular, argon, which is inexpensive, is preferablyused.

In addition, since the insulating film formed by using the high-densityplasma apparatus can have certain thickness, the insulating film hasexcellent step coverage. Further, as for the insulating film formed byusing the high-density plasma apparatus, the thickness of a thin filmcan be controlled precisely.

The insulating film formed through the above process procedure isgreatly different from the insulating film formed using a conventionalparallel plate plasma CVD apparatus. The etching rate of the insulatingfilm formed through the above process procedure is lower than that ofthe insulating film formed using the conventional parallel plate plasmaCVD apparatus by 10% or more or 20% or more in the case where theetching rates with the same etchant are compared to each other. Thus, itcan be said that the insulating film formed using the high-densityplasma apparatus is a dense film.

An oxide semiconductor layer which is made to be intrinsic (i-type) orsubstantially intrinsic in a later step (a high-purity oxidesemiconductor layer) is highly sensitive to an interface state andinterface charge; thus, an interface between the oxide semiconductorlayer and the gate insulating layer is important. Therefore, the gateinsulating layer which is in contact with the high-purity oxidesemiconductor layer needs high quality. Therefore, a high-density plasmaCVD apparatus with use of microwaves (2.45 GHz) is preferably employedsince formation of a dense and high-quality insulating film having highwithstand voltage can be formed. When the high-purity oxidesemiconductor layer and the high-quality gate insulating layer are inclose contact with each other, the interface state density can bereduced and favorable interface characteristics can be obtained. It isimportant that the gate insulating layer have lower interface statedensity with an oxide semiconductor layer and a favorable interface aswell as having favorable film quality as a gate insulating layer.

Then, an oxide semiconductor film 430 is formed to a thickness of 2 nmto 200 nm inclusive over the gate insulating layer 402. Note that beforethe oxide semiconductor film 430 is formed by a sputtering method,powdery substances (also referred to as particles or dust) which areattached on a surface of the gate insulating layer 402 are preferablyremoved by reverse sputtering in which an argon gas is introduced andplasma is generated. The reverse sputtering refers to a method in which,without application of a voltage to a target side, an RF power source isused for application of a voltage to a substrate side in an argonatmosphere to modify a surface. Note that instead of an argonatmosphere, a nitrogen atmosphere, a helium atmosphere, an oxygenatmosphere, or the like may be used.

As the oxide semiconductor film 430, an In—Ga—Zn—O-based oxidesemiconductor film, an In—Sn—O-based oxide semiconductor film, anIn—Sn—Zn—O-based oxide semiconductor film, an In—Al—Zn—O-based oxidesemiconductor film, an Sn—Ga—Zn—O-based oxide semiconductor film, anAl—Ga—Zn—O-based oxide semiconductor film, an Sn—Al—Zn—O-based oxidesemiconductor film, an In—Zn—O-based oxide semiconductor film, anSn—Zn—O-based oxide semiconductor film, an Al—Zn—O-based oxidesemiconductor film, an In—O-based oxide semiconductor film, anSn—O-based oxide semiconductor film, or a Zn—O-based oxide semiconductorfilm is used. In this embodiment, the oxide semiconductor film 430 isformed by a sputtering method with the use of an In—Ga—Zn—O-based metaloxide target. A cross-sectional view of this stage is illustrated inFIG. 4A. Alternatively, the oxide semiconductor film 430 can be formedby a sputtering method in a rare gas (typically argon) atmosphere, anoxygen atmosphere, or a mixed atmosphere containing a rare gas(typically argon) and oxygen. Note that when a sputtering method isused, deposition is performed using a target including SiO₂ at 2 percentby weight or more and 10 percent by weight or less and the oxidesemiconductor film 430 is made to include SiO_(x) (X>0) which suppressescrystallization, so that crystallization can be suppressed when a heattreatment is performed for dehydration or dehydrogenation performed in alater process.

Here, film deposition is performed using a metal oxide target containingIn, Ga, and Zn (In₂O₃:Ga₂O₃:ZnO=1:1:1 [mol], In:Ga:Zn=1:1:0.5 [atom]).The deposition condition is set as follows: the distance between thesubstrate and the target is 100 mm, the pressure is 0.2 Pa, the directcurrent (DC) power is 0.5 kW, and the atmosphere is a mixed atmosphereof argon and oxygen (argon:oxygen=30 sccm:20 sccm and the oxygen flowrate is 40%). Note that a pulse direct current (DC) power supply ispreferable because powder substances generated at the time of depositioncan be reduced and the film thickness can be made uniform. TheIn—Ga—Zn—O-based film is formed to a thickness of 5 nm to 200 nminclusive. In this embodiment, as the oxide semiconductor film, a20-nm-thick In—Ga—Zn—O-based film is formed by a sputtering method withthe use of an In—Ga—Zn—O-based metal oxide target. As the metal oxidetarget containing In, Ga, and Zn, a target having a composition ratio ofIn:Ga:Zn=1:1:1 [atom] or a target having a composition ratio ofIn:Ga:Zn=1:1:2 [atom] can also be used.

Examples of a sputtering method include an RF sputtering method in whicha high-frequency power source is used as a sputtering power source, a DCsputtering method, and a pulsed DC sputtering method in which a bias isapplied in a pulsed manner. An RF sputtering method is mainly used inthe case where an insulating film is formed, and a DC sputtering methodis mainly used in the case where a metal film is formed.

In addition, there is also a multi-source sputtering apparatus in whicha plurality of targets of different materials can be set. With themulti-source sputtering apparatus, films of different materials can beformed to be stacked in the same chamber, or a film of plural kinds ofmaterials can be formed by electric discharge at the same time in thesame chamber.

In addition, there are a sputtering apparatus provided with a magnetsystem inside the chamber and used for a magnetron sputtering, and asputtering apparatus used for an ECR sputtering in which plasmagenerated with the use of microwaves is used without using glowdischarge.

Furthermore, as a deposition method by a sputtering method, there arealso a reactive sputtering method in which a target substance and asputtering gas component are chemically reacted with each other duringdeposition to form a thin compound film thereof, and a bias sputteringin which a voltage is also applied to a substrate during deposition.

Then, the oxide semiconductor film 430 is processed into anisland-shaped oxide semiconductor layer through a secondphotolithography step. Note that a resist mask used in the step may beformed by an inkjet method. Formation of the resist mask by an inkjetmethod needs no photomask; thus, manufacturing cost can be reduced.

Next, dehydration or dehydrogenation of the oxide semiconductor layer isperformed. The temperature of a first heat treatment for dehydration ordehydrogenation is higher than or equal to 400° C. and lower than orequal to 750° C., preferably higher than or equal to 400° C. and lowerthan the strain point of the substrate. Here, the substrate isintroduced into an electric furnace which is a kind of heat treatmentapparatus, a heat treatment is performed on the oxide semiconductorlayers in a nitrogen atmosphere at 450° C. for one hour, and then, theoxide semiconductor layer is not exposed to the air so that entry ofwater and hydrogen into the oxide semiconductor layer is prevented;thus, an oxide semiconductor layer 431 is obtained (see FIG. 4B).

Note that a heat treatment apparatus is not limited to an electricalfurnace, and may include a device for heating an object to be processedby heat conduction or heat radiation from a heating element such as aresistance heating element. For example, an RTA (rapid thermal anneal)apparatus such as a GRTA (gas rapid thermal anneal) apparatus or an LRTA(lamp rapid thermal anneal) apparatus can be used. An LRTA apparatus isan apparatus for heating an object to be processed by radiation of light(an electromagnetic wave) emitted from a lamp such as a halogen lamp, ametal halide lamp, a xenon arc lamp, a carbon arc lamp, a high pressuresodium lamp, or a high pressure mercury lamp. A GRTA apparatus is anapparatus for a heat treatment using a high-temperature gas. As the gas,an inert gas which does not react with an object to be processed by aheat treatment, such as nitrogen or a rare gas such as argon is used.

For example, as the first heat treatment, GRTA by which the substrate ismoved into an inert gas heated to a temperature as high as 650° C. to700° C., heated for several minutes, and moved out of the inert gasheated to the high temperature may be performed. With GRTA, ahigh-temperature heat treatment for a short period of time can beachieved.

Note that in the first heat treatment, it is preferable that water,hydrogen, and the like be not contained in the atmosphere of nitrogen ora rare gas such as helium, neon, or argon. It is preferable that thepurity of nitrogen or the rare gas such as helium, neon, or argon whichis introduced into a heat treatment apparatus be set to be 6N (99.9999%)or higher, preferably 7N (99.99999%) or higher (that is, the impurityconcentration is 1 ppm or lower, preferably 0.1 ppm or lower).

The first heat treatment may be performed on the oxide semiconductorfilm 430 which has not yet been processed into the island-shaped oxidesemiconductor layer. In that case, after the first heat treatment, thesubstrate is extracted from the heat treatment apparatus, and then thesecond photolithography step is performed.

The heat treatment for dehydration or dehydrogenation of the oxidesemiconductor layer may be performed at any of the following timings:after the oxide semiconductor layer is formed; after a source electrodelayer and a drain electrode layer are formed over the oxidesemiconductor layer; and after a protective insulating film is formedover the source electrode layer and the drain electrode layer.

Further, in the case where an opening portion is formed in the gateinsulating layer 402, the step of forming the opening portion may beperformed either before or after the oxide semiconductor film 430 issubjected to dehydration or dehydrogenation treatment.

Note that the etching of the oxide semiconductor film 430 is not limitedto wet etching, and dry etching may also be used.

As the etching gas for dry etching, a gas including chlorine(chlorine-based gas such as chlorine (Cl₂), boron trichloride (BCl₃),silicon tetrachloride (SiCl₄), or carbon tetrachloride (CCl₄)) ispreferably used.

Alternatively, a gas containing fluorine (fluorine-based gas such ascarbon tetrafluoride (CF₄), sulfur hexafluoride (SF₆), nitrogentrifluoride (NF₃), or trifluoromethane (CHF₃)); hydrogen bromide (HBr);oxygen (O₂); any of these gases to which a rare gas such as helium (He)or argon (Ar) is added; or the like can be used.

As the dry etching method, a parallel plate RIE (reactive ion etching)method or an ICP (inductively coupled plasma) etching method can beused. In order to etch the film into desired shapes, the etchingcondition (the amount of electric power applied to a coil-shapedelectrode, the amount of electric power applied to an electrode on asubstrate side, the temperature of the electrode on the substrate side,or the like) is adjusted as appropriate.

As an etchant used for wet etching, a mixed solution of phosphoric acid,acetic acid, and nitric acid, or the like can be used. In addition,ITO07N (produced by KANTO CHEMICAL CO., INC.) may also be used.

The etchant after the wet etching is removed together with the etchedmaterials by cleaning. The waste liquid including the etchant and thematerial etched off may be purified and the material may be reused. Whena material such as indium included in the oxide semiconductor layer iscollected from the waste liquid after the etching and reused, theresources can be efficiently used and the cost can be reduced.

The etching conditions (such as an etchant, etching time, andtemperature) are appropriately adjusted depending on the material sothat the material can be etched into a desired shape.

Next, a metal conductive film is formed over the gate insulating layer402 and the oxide semiconductor layer 431. The metal conductive film maybe formed by a sputtering method or a vacuum evaporation method. As amaterial of the metal conductive film, an element selected from aluminum(Al), chromium (Cr), copper (Cu), tantalum (Ta), titanium (Ti),molybdenum (Mo), and tungsten (W), an alloy containing any of theseelements as a component, an alloy containing any of these the elementsin combination, or the like can be given. Alternatively, one or morematerials selected from manganese (Mn), magnesium (Mg), zirconium (Zr),beryllium (Be), and yttrium (Y) may be used. Further, the metalconductive film may have a single-layer structure or a layered structureof two or more layers. For example, the following structures can begiven: a single-layer structure of an aluminum film including silicon, asingle-layer structure of a copper film, or a film including copper as amain component, a two-layer structure in which a titanium film isstacked over an aluminum film, a two-layer structure in which a copperfilm is formed over a tantalum nitride film or a copper nitride film,and a three-layer structure in which an aluminum film is stacked over atitanium film and another titanium film is stacked over the aluminumfilm. Alternatively, a film, an alloy film, or a nitride film whichcontains aluminum (Al) and one or more of elements selected fromtitanium (Ti), tantalum (Ta), tungsten (W), molybdenum (Mo), chromium(Cr), neodymium (Nd), and scandium (Sc) may be used.

If a heat treatment is performed after formation of the metal conductivefilm, it is preferable that the metal conductive film have heatresistance enough to withstand the heat treatment.

A third photolithography step is performed. A resist mask is formed overthe metal conductive film and etching is selectively performed, so thata source electrode layer 415 a and a drain electrode layer 415 b areformed. Then, the resist mask is removed (see FIG. 4C).

Note that materials and etching conditions are adjusted as appropriateso that the oxide semiconductor layer 431 is not removed by etching ofthe metal conductive film.

Note that, in the third photolithography step, only a part of the oxidesemiconductor layer 431 is etched, whereby an oxide semiconductor layerhaving groove (depressed portions) is formed in some cases.Alternatively, the resist mask used in the step may be formed by aninkjet method. Formation of the resist mask by an inkjet method needs nophotomask; thus, manufacturing cost can be reduced.

In order to reduce the number of photomasks used in a photolithographystep and reduce the number of photolithography steps, an etching stepmay be performed with the use of a multi-tone mask which is alight-exposure mask through which light is transmitted to have aplurality of intensities. Since a resist mask formed using a multi-tonemask has a plurality of thicknesses and can be further changed in shapeby performing ashing, the resist mask can be used in a plurality ofetching steps to provide different patterns. Therefore, a resist maskcorresponding to at least two kinds or more of different patterns can beformed by one multi-tone mask. Thus, the number of light-exposure maskscan be reduced and the number of corresponding photolithography stepscan be also reduced, whereby simplification of a process can berealized.

Next, plasma treatment using a gas such as nitrous oxide (N₂O), nitrogen(N₂), or argon (Ar) is performed. By this plasma treatment, water andthe like absorbed onto an exposed surface of the oxide semiconductorlayer are removed. Plasma treatment may be performed using a mixture gasof oxygen and argon as well.

After the plasma treatment, an oxide insulating layer 416 which servesas a protective insulating film and is in contact with part of the oxidesemiconductor layer is formed without exposure to the air.

The oxide insulating layer 416, which has a thickness of at least 1 nmor more, can be formed as appropriate by a sputtering method or thelike, that is a method with which impurities such as water and hydrogenare not mixed into the oxide insulating layer 416. When hydrogen iscontained in the oxide insulating layer 416, entry of the hydrogen tothe oxide semiconductor layer is caused, thereby making a backchannel ofthe oxide semiconductor layer 431 have a lower resistance (have n-typeconductivity) and forming parasitic channels. Therefore, it is importantthat a formation method in which hydrogen is not used is employed inorder to form the oxide insulating layer 416 containing as littlehydrogen as possible.

Here, a 200-nm-thick silicon oxide film is deposited as the oxideinsulating layer 416 by a sputtering method. The substrate temperaturein deposition may be higher than or equal to a room temperature andlower than or equal to 300° C. and in this embodiment, is 100° C.Formation of a silicon oxide film by a sputtering method can beperformed in a rare gas (typically, argon) atmosphere, an oxygenatmosphere, or an atmosphere of a rare gas (typically, argon) andoxygen. As a target, a silicon oxide target or a silicon target may beused. For example, the silicon oxide film can be formed using a silicontarget by a sputtering method in an atmosphere including oxygen andnitrogen.

Next, a second heat treatment is performed, preferably in an inert gasatmosphere or an oxygen gas atmosphere (preferably at 200° C. to 400° C.inclusive, e.g. 250° C. to 350° C. inclusive). For example, the secondheat treatment is performed in a nitrogen atmosphere at 250° C. for onehour. Through the second heat treatment, part of the oxide semiconductorlayer (a channel formation region) is heated while being in contact withthe oxide insulating layer 416. Thus, oxygen is supplied to part of theoxide semiconductor layer (a channel formation region).

Through the above process procedure, the oxide semiconductor layer issubjected to the heat treatment for dehydration or dehydrogenation, andthen, part of the oxide semiconductor layer (a channel formation region)is selectively made to be in an oxygen excess state. As a result, achannel formation region 413 overlapping with the gate electrode layer411 becomes i-type, and a source region 414 a overlapping with thesource electrode layer 415 a and a drain region 414 b overlapping withthe drain electrode layer 415 b are formed in a self-aligned manner.Accordingly, the thin film transistor 410 is formed.

In a gate bias-temperature stress test (BT test) at 85° C. with 2×10⁶V/cm for 12 hours, if an impurity is added to an oxide semiconductor, abond between the impurity and a main component of the oxidesemiconductor is broken by a high electric field (B: bias) and hightemperature (T: temperature), and a generated dangling bond causes adrift of the threshold voltage (V_(th)). On the other hand, by removingimpurities in an oxide semiconductor as much as possible, especiallyhydrogen or water and using the high-density plasma CVD apparatus, adense and high-quality insulating film with high withstand voltage andgood interface characteristics between the insulating film and an oxidesemiconductor as described above can be obtained; thus, a transistorwhich is stable even in the BT test can be obtained.

Further, heat treatment may be performed at 100° C. to 200° C. inclusivefor one hour to 30 hours inclusive in the air. Here, the heat treatmentis performed at 150° C. for 10 hours. This heat treatment may beperformed at a fixed heating temperature.

Alternatively, the following change in the heating temperature may beconducted plural times repeatedly: the heating temperature is increasedfrom a room temperature to a temperature of 100° C. to 200° C. and thendecreased to a room temperature. Further, this heat treatment may beperformed before formation of the oxide insulating film under a reducedpressure. Under the reduced pressure, the heat treatment time can beshortened. By the heat treatment, hydrogen is taken in the oxideinsulating layer from the oxide semiconductor layer.

By the formation of the drain region 414 b in part of the oxidesemiconductor layer, which overlaps with the drain electrode layer 415b, reliability of the thin film transistor can be improved.Specifically, by the formation of the drain region 414 b, a structure inwhich conductivity can be varied from the drain electrode layer 415 b tothe channel formation region 413 through the drain region 414 b can beobtained.

Further, the source region or the drain region in the oxidesemiconductor layer is formed in the entire thickness direction in thecase where the thickness of the oxide semiconductor layer is 15 nm orless. In the case where the thickness of the oxide semiconductor layeris 30 nm to 50 nm inclusive, in part of the oxide semiconductor layer,that is, in a region in the oxide semiconductor layer, which is incontact with the source electrode layer or the drain electrode layer,and the vicinity thereof, resistance is reduced and the source region orthe drain region is formed, while a region in the oxide semiconductorlayer, which is close to the gate insulating layer, can be made to bei-type.

A protective insulating layer may be further formed over the oxideinsulating layer 416. For example, a silicon nitride film is formed byan RF sputtering method. Since an RF sputtering method has highproductivity, it is preferably used as a film formation method of theprotective insulating layer. As the protective insulating layer, aninorganic insulating film which does not include impurities such asmoisture, a hydrogen ion, and OH⁻ and blocks entry of these from theoutside is used; a silicon nitride film, an aluminum nitride film, asilicon nitride oxide film, an aluminum oxynitride film, or the like isused. In this embodiment, as the protective insulating layer, aprotective insulating layer 403 is formed using a silicon nitride film(see FIG. 4D).

Note that the contents of Embodiment 2 or part thereof can be combinedfreely with the contents of Embodiment 1, 3, and 4 or part thereof orthe content of Example 1 or part thereof.

Embodiment 3

In this embodiment, a structure of the liquid crystal display devicedescribed in Embodiment 1 which has a touch-panel function is describedwith reference to FIGS. 5A and 5B.

FIG. 5A is a schematic view of a liquid crystal display device of thisembodiment. FIG. 5A illustrates a structure in which a touch panel unit502 is stacked on a liquid crystal display panel 501 which is the liquidcrystal display device of Embodiment 1 and they are attached with ahousing 503. As the touch panel unit 502, a resistive touch sensor, asurface capacitive touch sensor, a projected capacitive touch sensor, orthe like can be used as appropriate.

The liquid crystal display panel 501 and the touch panel unit 502 aremanufactured separately and stacked as illustrated in FIG. 5A, wherebythe cost of manufacturing a liquid crystal display device having atouch-panel function can be reduced.

FIG. 5B illustrates a structure of a liquid crystal display devicehaving a touch-panel function, which is different from that illustratedin FIG. 5A. A liquid crystal display device 504 illustrated in FIG. 5Bincludes a plurality of pixels 505 each having a light sensor 506 and aliquid crystal element 507. Therefore, the touch panel unit 502 is notnecessarily stacked, which is different from that illustrated in FIG.5A. Thus, a liquid crystal display device can be thinned. Further, ascan line driver circuit 508, a signal line driver circuit 509, and alight sensor driver circuit 510 are manufactured over the same substrateas the pixels 505. Thus, a liquid crystal display device can be reducedin size. Note that the light sensor 506 may be formed using amorphoussilicon or the like and stacked on a transistor including an oxidesemiconductor.

A transistor including an oxide semiconductor layer is used in a liquidcrystal display device having a touch-panel function, whereby imageholding characteristics in still image display can be improved. Further,power consumption can be reduced by stopping the operation of a drivercircuit portion in the still image display.

Note that the contents of Embodiment 3 or part thereof can be combinedfreely with the contents of Embodiments 1, 2, and 4 or part thereof orthe content of Example 1 or part thereof.

Embodiment 4

In Embodiment 4, examples of an electronic device on which the liquidcrystal display device in Embodiment 1 is mounted are described withreference to FIGS. 6A to 6F. Note that the liquid crystal display devicein accordance with Embodiment 1 is used for a display portion of anelectronic device.

FIG. 6A illustrates a laptop computer, which includes a main body 2201,a housing 2202, a display portion 2203, a keyboard 2204, and the like.The use of the liquid crystal display device in Embodiment 1 for adisplay portion of the laptop computer or the like has a profound effectnot only in reducing power consumption but in relieving eyestrain causedby long-term use, because of the following reasons. Display of a laptopcomputer or the like is changed mainly with the operation by the user.That is, the laptop computer displays a still image during intervalsbetween the operations by a user. Further, in general, inversion driveis performed in a liquid crystal display device in order to suppressdegradation of a liquid crystal material. If the inversion drive isperformed in a period where a still image is displayed, flicker of animage is recognized by a user. The flicker promotes eyestrain of theuser. However, with the use of the liquid crystal display devicedescribed in Embodiment 1, an image signal can be held for a long periodof time in each pixel, whereby a flicker recognized by a user can bereduced in a period of still image display. Thus, it can be said thatthe use of the liquid crystal display device described in Embodiment 1for a laptop computer or the like has a profound effect in relievingeyestrain of the user.

FIG. 6B illustrates a personal digital assistant (PDA), which includes amain body 2211 having a display portion 2213, an external interface2215, an operation button 2214, and the like. A stylus 2212 foroperation is included as an accessory.

FIG. 6C illustrates an e-book reader 2220 as an example of electronicpaper. The e-book reader 2220 includes two housings: housings 2221 and2223. The housings 2221 and 2223 are bound with each other by an axisportion 2237, along which the e-book reader 2220 can be opened andclosed. With such a structure, the e-book reader 2220 can be used aspaper books.

A display portion 2225 is incorporated in the housing 2221, and adisplay portion 2227 is incorporated in the housing 2223. The displayportion 2225 and the display portion 2227 may display one image ordifferent images. In the structure where the display portions displaydifferent images from each other, for example, the right display portion(the display portion 2225 in FIG. 6C) can display text and the leftdisplay portion (the display portion 2227 in FIG. 6C) can displayimages.

Further, in FIG. 6C, the housing 2221 is provided with an operationportion and the like. For example, the housing 2221 is provided with apower supply 2231, an operation key 2233, a speaker 2235, and the like.With the operation key 2233, pages can be turned. Note that a keyboard,a pointing device, or the like may also be provided on the surface ofthe housing, on which the display portion is provided. Furthermore, anexternal connection terminal (an earphone terminal, a USB terminal, aterminal that can be connected to various cables such as an AC adapterand a USB cable, or the like), a recording medium insertion portion, andthe like may be provided on the back surface or the side surface of thehousing. Further, the e-book reader 2220 may have a function of anelectronic dictionary.

The e-book reader 2220 may be configured to transmit and receive datawirelessly. Through wireless communication, desired book data or thelike can be purchased and downloaded from an electronic book server.

Note that electronic paper can be applied to devices in a variety offields as long as they display information. For example, electronicpaper can be used for posters, advertisement in vehicles such as trains,display in a variety of cards such as credit cards, and the like inaddition to e-book readers.

FIG. 6D illustrates a mobile phone. The mobile phone includes twohousings: housings 2240 and 2241. The housing 2241 is provided with adisplay panel 2242, a speaker 2243, a microphone 2244, a pointing device2246, a camera lens 2247, an external connection terminal 2248, and thelike. The housing 2240 is provided with a solar cell 2249 which chargesthe mobile phone, an external memory slot 2250, and the like. An antennais incorporated in the housing 2241.

The display panel 2242 has a touch panel function. A plurality ofoperation keys 2245 which are displayed as images is illustrated bydashed lines in FIG. 6D. Note that the mobile phone includes a boostercircuit for increasing a voltage output from the solar cell 2249 to avoltage needed for each circuit. Moreover, the mobile phone can includea contactless IC chip, a small recording device, or the like in additionto the above structure.

The display orientation of the display panel 2242 is changed asappropriate in accordance with the application mode. Further, the cameralens 2247 is provided on the same surface as the display panel 2242, andthus it can be used as a video phone. The speaker 2243 and themicrophone 2244 can be used for videophone calls, recording, and playingsound, etc. as well as voice calls. Moreover, the housings 2240 and 2241in a state where they are developed as illustrated in FIG. 6D can beslid so that one is lapped over the other; therefore, the size of theportable phone can be reduced, which makes the portable phone suitablefor being carried.

The external connection terminal 2248 can be connected to an AC adapteror a variety of cables such as a USB cable, which enables charging ofthe mobile phone and data communication. Moreover, a larger amount ofdata can be saved and moved by inserting a recording medium to theexternal memory slot 2250. Further, in addition to the above functions,an infrared communication function, a television reception function, orthe like may be provided.

FIG. 6E illustrates a digital camera, which includes a main body 2261, adisplay portion (A) 2267, an eyepiece 2263, an operation switch 2264, adisplay portion (B) 2265, a battery 2266, and the like.

FIG. 6F illustrates a television set 2270, which includes a displayportion 2273 incorporated in a housing 2271. The display portion 2273can display images. Here, the housing 2271 is supported by a stand 2275.

The television set 2270 can be operated by an operation switch of thehousing 2271 or a separate remote controller 2280. Channels and volumecan be controlled with an operation key 2279 of the remote controller2280 so that an image displayed on the display portion 2273 can becontrolled. Moreover, the remote controller 2280 may have a displayportion 2277 in which the information outgoing from the remotecontroller 2280 is displayed.

Note that the television set 2270 is preferably provided with areceiver, a modem, and the like. A general television broadcast can bereceived with the receiver. Moreover, when the television set isconnected to a communication network with or without wires via themodem, one-way (from a sender to a receiver) or two-way (between asender and a receiver or between receivers) data communication can beperformed.

Note that the contents of Embodiment 4 or part thereof can be combinedfreely with the contents of Embodiments 1, 2, and 3 or part thereof orthe content of Example 1 or part thereof.

EXAMPLE 1

In this example, measured values of the off-state current using a testelement group (also referred to as a TEG) will be described below.

FIG. 7 shows initial characteristics of a transistor with L/W=3 μm/10000μm in which 200 transistors each with L/W=3 μm/50 μm are connected inparallel. In addition, a top view thereof is FIG. 8A and a partiallyenlarged top view thereof is FIG. 8B. The region enclosed by a dottedline in FIG. 8B is a transistor of one stage with L/W=3 μm/50 μm andL_(ov)=1.5 μm. Here, L_(ov) represents a length of a region where asource or a drain overlaps with an oxide semiconductor layer, in achannel length direction. In order to measure initial characteristics ofthe transistor, the changing characteristics of the source-drain current(hereinafter referred to as a drain current or Id), i.e., Vg-Idcharacteristics, were measured, under the conditions where the substratetemperature was set to a room temperature, the voltage between sourceand drain (hereinafter, a drain voltage or Vd) was set to 10 V, and thevoltage between source and gate (hereinafter, a gate voltage or Vg) waschanged from −20 V to +20 V Note that FIG. 7 shows Vg in the range offrom −20 V to +5 V.

As shown in FIG. 7, the transistor having a channel width W of 10000 μmhas an off-state current of 1×10⁻¹³ A or less at Vd of 1 V and 10 V,which is less than or equal to the resolution (100 fA) of a measurementdevice (a semiconductor parameter analyzer, Agilent 4156C manufacturedby Agilent Technologies Inc.). That is, in the case where the channellength is 3 μm, an estimated off-state current of the transistor permicrometer in channel width is 10 aA/μm or less. In addition, in thecase where the channel length is 3 μm or more, an estimated off-statecurrent of the transistor is 10 aA/μm or less.

A method for manufacturing the transistor used for the measurement isdescribed.

First, a silicon nitride layer was formed as a base layer over a glasssubstrate by a CVD method, and a silicon oxynitride layer was formedover the silicon nitride layer. A tungsten layer was formed as a gateelectrode layer over the silicon oxynitride layer by a sputteringmethod. Here, the tungsten layer was selectively etched into the gateelectrode layer.

Then, a silicon oxynitride layer having a thickness of 100 nm was formedas a gate insulating layer over the gate electrode layer by a CVDmethod.

Then, an oxide semiconductor layer having a thickness of 50 nm wasformed over the gate insulating layer by a sputtering method using anIn—Ga—Zn—O-based metal oxide target (at a molar ratio ofIn₂O₃:Ga₂O₃:ZnO=1:1:2). Here, the oxide semiconductor layer wasselectively etched into an island-shaped oxide semiconductor layer.

Then, a first heat treatment was performed on the oxide semiconductorlayer in a nitrogen atmosphere in a clean oven at 450° C. for one hour.

Then, a titanium layer (having a thickness of 150 nm) was formed as asource electrode layer and a drain electrode layer over the oxidesemiconductor layer by a sputtering method. Here, the source electrodelayer and the drain electrode layer were selectively etched such that200 transistors each having a channel length L of 3 μm and a channelwidth W of 50 μm were connected in parallel to obtain a transistor withL/W=3 μm/10000 μm.

Next, a silicon oxide layer having a thickness of 300 nm was formed as aprotective insulating layer in contact with the oxide semiconductorlayer by a reactive sputtering method. Here, the silicon oxide layerwhich is a protective layer was selectively etched to form openingportions over the gate electrode layer, the source electrode layer, andthe drain electrode layer. After that, a second heat treatment wasperformed in a nitrogen atmosphere at 250° C. for one hour.

Then, heat treatment was performed at 150° C. for 10 hours before themeasurement of Vg-Id characteristics.

Through the above process, a bottom-gate transistor was manufactured.

The reason why the transistor has an off-state current of about 1×10⁻¹³A as shown in FIG. 7 is that the concentration of hydrogen in the oxidesemiconductor layer could be sufficiently reduced in the abovemanufacturing process. The concentration of hydrogen in the oxidesemiconductor layer is 1×10¹⁶/cm³ or less. Note that the concentrationof hydrogen in the oxide semiconductor layer was measured by secondaryion mass spectrometry (SIMS).

Although the example of using an In—Ga—Zn—O-based oxide semiconductor isdescribed, Example 1 is not particularly limited thereto. Another oxidesemiconductor material, such as an In—Sn—Zn—O-based oxide semiconductor,a Sn—Ga—Zn—O-based oxide semiconductor, an Al—Ga—Zn—O-based oxidesemiconductor, a Sn—Al—Zn—O-based oxide semiconductor, an In—Zn—O-basedoxide semiconductor, an In—Sn—O-based oxide semiconductor, aSn—Zn—O-based oxide semiconductor, an Al-—Zn—O-based oxidesemiconductor, an In—O-based oxide semiconductor, a Sn—O-based oxidesemiconductor, or a Zn—O-based oxide semiconductor, can also be used. Asan oxide semiconductor material, an In—Al—Zn—O-based oxide semiconductormixed with AlO_(x) of 2.5 wt % to 10 wt % or an In—Zn—O-based oxidesemiconductor mixed with SiO_(x) of 2.5 wt % to 10 wt % can be used.

The carrier concentration of the oxide semiconductor layer which ismeasured by a carrier measurement device is less than 1×10¹⁴/cm³,preferably 1×10¹²/cm³ or less. In other words, the carrier concentrationof the oxide semiconductor layer can be made as close to zero aspossible.

The transistor can also have a channel length L of greater than or equalto 10 nm and less than or equal to 1000 nm, which enables an increase incircuit operation speed, and the off-state current is extremely small,which enables a further reduction in power consumption.

In addition, in circuit design, the oxide semiconductor layer can beregarded as an insulator when the transistor is in an off state.

After that, the temperature characteristics of off-state current of thetransistor manufactured in this example were evaluated. Temperaturecharacteristics are important in considering the environmentalresistance, maintenance of performance, or the like of an end product inwhich the transistor is used. It is to be understood that a smalleramount of change is more preferable, which increases the degree offreedom for product designing.

For the temperature characteristics, the Vg-Id characteristics wereobtained using a constant-temperature chamber under the conditions wheresubstrates provided with transistors were kept at respective constanttemperatures of −30° C., 0° C., 25° C., 40° C., 60° C., 80° C., 100° C.,and 120° C., the drain voltage was set to 6 V, and the gate voltage waschanged from −20 V to +20V.

FIG. 9A shows Vg-Id characteristics measured at the above temperaturesand superimposed on one another, and FIG. 9B shows an enlarged view of arange of off-state current enclosed by a dotted line in FIG. 9A. Therightmost curve indicated by an arrow in the graph is a curve obtainedat −30° C.; the leftmost curve is a curve obtained at 120° C.; andcurves obtained at the other temperatures are located therebetween. Thetemperature dependence of on-state currents can hardly be observed. Onthe other hand, as clearly shown also in the enlarged view of FIG. 9B,the off-state currents are less than or equal to 1×10⁻¹² A, which isnear the resolution of the measurement device, at all temperaturesexcept in the vicinity of a gate voltage of −20 V, and the temperaturedependence thereof is not observed. In other words, even at a hightemperature of 120° C., the off-state current is kept less than or equalto 1×10⁻¹² A, and given that the channel width W is 10000 μm, it can beseen that the off-state current is significantly small. That is, in thecase where the channel length is 3 μm, an estimated off-state current ofthe transistor per micrometer in channel width is 100 aA/μm or less. Inaddition, in the case where the channel length is 3 μm or more, anestimated off-state current of the transistor is 100 aA/μm or less.Further, data in FIGS. 9A and 9B shows that off-state current of thetransistor manufactured in accordance with this example is 100 aA/μm orless at −30° C. to 120° C. inclusive. In addition, off-state current of100 aA/μm at 85° C. is naturally estimated. That is, data in FIGS. 9Aand 9B shows that, in the case where constant temperature preservationtest at 85° C. is performed on a liquid crystal display device in whichthe transistor manufactured in this example is used as a transistor ineach pixel, the amount of leakage of an image signal in the pixel isreduced and display degradation (change) is suppressed.

A transistor including a purified oxide semiconductor (purified OS) asdescribed above shows almost no dependence of off-state current ontemperature. It can be said that an oxide semiconductor does not showtemperature dependence when purified because the conductivity typebecomes extremely close to an intrinsic type and the Fermi level islocated in the middle of the forbidden band. This also results from thefact that the oxide semiconductor has a larger band gap and includesvery few thermally excited carriers. In addition, the source region andthe drain region are in a degenerated state, which is also a factor forshowing no temperature dependence. The transistor is mainly operatedwith carriers which are injected from the degenerated source region tothe oxide semiconductor, and the above characteristics (independence ofoff-state current on temperature) can be explained by independence ofcarrier concentration on temperature.

The results described above show that, in a transistor whose carrierdensity is less than 1×10¹⁴/cm³, preferably less than or equal to1×10¹²/cm³, an off-state current at a room temperature is 10 aA/μm orless and an off-state current at 85° C. is 100 aA/μm or less. Further,the results show that, by using the transistor as a transistor includedin each pixel of a liquid crystal display device, power consumption ofthe liquid crystal display device can be reduced and display degradation(reduction in display quality) of the liquid crystal display device canbe suppressed. Furthermore, the results show that a liquid crystaldisplay device in which display degradation (change) due to an externalfactor such as temperature is reduced can be provided.

This application is based on Japanese Patent Application serial no.2009-288312 filed with Japan Patent Office on Dec. 18, 2009, andJapanese Patent Application serial no. 2010-092111 filed with JapanPatent Office on Apr. 13, 2010, the entire contents of which are herebyincorporated by reference.

1. (canceled)
 2. A display device comprising: a liquid crystal element;and a transistor comprising an oxide semiconductor layer in a channelformation region, wherein one of a source and a drain of the transistoris electrically connected to one terminal of the liquid crystal element,and wherein a leakage current between a source electrode and a drainelectrode of the transistor is smaller than a leakage current of theliquid crystal element when the transistor is in an off state.
 3. Thedisplay device according to claim 2, further comprising a switch betweenthe other terminal of the liquid crystal element and a power sourceconfigured to supply a common potential, wherein the other terminal ofthe liquid crystal element is in a floating state when the switch isoff.
 4. The display device according to claim 2, wherein a hydrogenconcentration in the oxide semiconductor layer is less than 1×10¹⁶atoms/cm³.
 5. The display device according to claim 2, wherein the oxidesemiconductor layer comprises indium, gallium, and zinc.
 6. The displaydevice according to claim 2, wherein an off-state current of thetransistor is less than or equal to 1×10⁻¹² A at a drain voltage of 6Vand a gate voltage of −5V or −10V.
 7. The display device according toclaim 2, wherein an off-state current of the transistor is less than orequal to 100 aA/μm at a drain voltage of 6V and a gate voltage of −5V or−10V.